Semiconductor devices and method of fabricating the same
US10304834B2 · kind B2 · utility
0Cited by
11References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2018 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Mar 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
Abstract
A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.