Back-side illuminated image sensor

US10304893B2 · kind B2 · utility

Assignee

• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Daniel Benoit · Alameda, US
• Olivier Hinsinger · Barraux, FR
• Emmanuel Gourvest · Voiron, FR

Key dates

• Filing date: May 11, 2017
• Grant date: May 28, 2019
• Expiry date: Jul 19, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

A back-side illuminated image sensor includes memory regions formed in a semiconductor wafer. Each memory region is located between two opaque walls which extend into the semiconductor wafer. An opaque screen is arranged at the rear surface of the memory region and in electrical contact with the opaque walls.