Polysilicon thin film transistor and manufacturing method thereof, array substrate, display panel
US10304963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2016 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Mar 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.