Fabrication and use of large-grain templates for epitaxial deposition of semiconductor materials
US10304989B2 · kind B2 · utility
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2References
17Claims
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Key dates
| Filing date | Mar 16, 2018 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Mar 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F71/129
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.