Magnetoresistive element and magnetic memory device
US10305027B2 · kind B2 · utility
5Cited by
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18Claims
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Key dates
| Filing date | Sep 8, 2017 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
Abstract
According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.