Surface emitting laser
US10305255B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 2017 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Jul 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting laser includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are only transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.