Semiconductor laser diode and method of manufacture thereof
US10305256B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2017 |
| Grant date | May 28, 2019 |
| Priority date | — |
| Expiry date | Feb 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1231
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser-diode device includes a substrate; at least one first cladding layer placed on the substrate; an active layer placed on the first cladding layer and arranged to emit a radiation; at least one second cladding layer placed on the active layer, said cladding layers being adapted to form a heterojunction; a first terminal facet and a second terminal facet placed transversally relative to the cladding layers and to the active layer; a periodic structure, placed in proximity to the second terminal facet and within the second cladding layer, and belonging to an optical cavity, wherein the first terminal facet represents the output mirror from which the radiation generated by the active layer exits, and the second terminal facet, integrated by the periodic structure, represents a second mirror having high reflectivity, so that the radiation produced by the active layer exits almost totally through the first mirror.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.