Patent · US Active

Apparatus for sputtering and operation method thereof

US10309007B2 · kind B2 · utility

0Cited by
4References
21Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 11, 2015
Grant dateJun 4, 2019
Priority date
Expiry dateJul 3, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/2855
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Some embodiments of the present disclosure provide a sputtering apparatus including a magnetron structure configured to erode a target according to a predetermined erosion rate profile symmetric to a central axis of the magnetron structure. The predetermined erosion rate profile includes a first peak rate in proximity to the central axis; and a second peak rate located at about from 0.7 to 0.75 of a radius of the target from the central axis.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.