Image sensor having photodetectors with reduced reflections
US10310144B2 · kind B2 · utility
1Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2016 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Jun 9, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B3/0056
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is described that has photodetectors with reduced reflections. In one example the image sensor has a plurality of photodetectors on a silicon substrate. The images sensor has a top surface and an anti-reflective coating over the photodetectors, the coating having an array of sub-wavelength sized features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.