Mirror, in particular for a microlithographic projection exposure apparatus
US10310382B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 8, 2016 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Feb 22, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K1/062
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mirror (10, 20, 30, 40), more particularly for a microlithographic projection exposure apparatus, has an optical effective surface (10a, 20a, 30a, 40a), a mirror substrate (11, 21, 31, 41) and a reflection layer stack (14, 24, 34, 44) for reflecting electromagnetic radiation impinging on the optical effective surface (10a, 20a, 30a, 40a), wherein a layer (13, 23, 33, 43) composed of a group III nitride is arranged between the mirror substrate (11, 21, 31, 41) and the reflection layer stack (14, 24, 34, 44), wherein the group III nitride is selected from the group containing gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.