Patent · US Active

Quantum dot ink

US10311994B2 · kind B2 · utility

5Cited by
6References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 29, 2015
Grant dateJun 4, 2019
Priority date
Expiry dateFeb 7, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K50/16
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A quantum dot ink, a manufacturing method thereof and a quantum dot light emitting diode device are provided. The quantum dot ink includes a non-polar organic solvent, a surface tension modifier and a hydrophobic quantum dot, the quantum dot ink further includes a carrier transport material, wherein phase separation is present between the hydrophobic quantum dot and the carrier transport material. After completing ink-jet printing the quantum dot ink, phase separation occurs between the hydrophobic quantum dot and the carrier transport material. Thus, the two-layer structure of a hydrophobic quantum dot layer and a carrier transport material layer is formed through one process. Not only a quantum dot light emitting device is manufactured by the method of ink-jet printing, but also the operation is simplified, and the manufacturing cost of the quantum dot light emitting device is reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.