Semiconductor device and method
US10312106B2 · kind B2 · utility
4Cited by
0References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Nov 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes exposing a material to a semi-aqueous etching solution. The semi-aqueous etching solution comprises a solvent which chelates with the material and acts as a catalyst between the etching driving force and the material. As such, the etching driving force may be used to remove the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.