Power semiconductor device comprising a substrate and load current terminal elements

US10312213B2 · kind B2 · utility

Assignee

• SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Markus Beck · Scotts Valley, US
• Alexander Schneider · Munich, DE
• Hartmut Kulas · Ebermannstadt, DE
• Patrick Graschl · Wolframs-Eschenbach, DE
• Christian Zeller · Pommersfelden, DE

Key dates

• Filing date: Aug 4, 2017
• Grant date: Jun 4, 2019
• Expiry date: Aug 4, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L25/072
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a power semiconductor device with a substrate with a cooling device and power semiconductor components connected thereon, having load current terminal elements and a cooling device. Pressure devices have a pressure element is arranged movably in a direction normal (N) to the substrate, and an elastic deformation element between the pressure element and a load current terminal element. The pressure element presses the assigned load current terminal element against an electrically conductive contact area of the substrate via the elastic deformation element and provides electrically conductive pressure contacting of the assigned load current terminal element with the substrate. The electrical connection of the power semiconductor device is improved.