Single photon avalanche diode (SPAD) with variable quench resistor
US10312274B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2018 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Jan 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A photosensitive diode has an anode terminal and a cathode terminal. A passive quench resistance circuit includes a resistor with a variable resistance that is controlled by a control signal. The resistor is electrically connected to the cathode terminal. The resistor of the passive quench resistance circuit is formed by a first semiconductor region. The control signal is applied to a control gate of the passive quench resistance circuit. The control gate is formed by a second semiconductor region that is insulated from the first semiconductor region and extends parallel to the first semiconductor region. The voltage of the control signal applied to the control gate controls the variable resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.