Semiconductor diode and electronic circuit arrangement herewith

US10312380B2 · kind B2 · utility

Assignee

• SEMIKRON ELEKTRONIK GMBH & CO. KG · DE

Inventors

• Christian Göbl · Koblenzer Straße, DE
• Boris Rosensaft · Nuremberg, DE
• Uwe Schilling · Dresden, DE
• Wolfgang Schulz · Wunstorf, DE
• Sven Teuber · Nuremberg, DE

Key dates

• Filing date: Jan 10, 2018
• Grant date: Jun 4, 2019
• Expiry date: Jan 10, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/40225

Abstract

A semiconductor diode includes a semiconductor body, having a first main area formed from an inner area, on which a first contact layer is arranged, and from an edge area, a current path from the first contact layer to a second contact layer arranged on a second main area situated opposite the first main area, wherein the semiconductor diode, by virtue of the configuration of the first contact layer or of the semiconductor body, is formed such that upon current flow, such current flows through a current path having the greatest heating per unit volume, and which proceeds from a further partial area of the inner area, wherein the further partial area is arranged on the other side of a boundary of an inner partial area of the inner area, said inner partial area preferably being arranged centrally, with respect to an outer partial area adjoining said inner partial area.