Patterned sapphire substrate, light emitting diode and fabrication method thereof
US10312409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2017 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Oct 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A patterned sapphire substrate has a first surface and a second surface opposite to each other, in which, the first surface of the substrate is formed by arranging a plurality of interspaced patterns, wherein, the patterns have a top surface, a bottom surface and a plurality of side surfaces and at least one concave region sandwiched between the adjacent side surfaces and the top surface, where, depth and width of the concave region gradually decrease from the top to the bottom of the pattern. The concave region on the pattern surface of the patterned sapphire substrate enlarges light reflection area, thus improving light extraction efficiency of the patterned sapphire substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.