Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device
US10312428B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Aug 24, 2016 |
| Grant date | Jun 4, 2019 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/3262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.