Integrated electronic device comprising a temperature sensor and sensing method
US10317293B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2015 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Mar 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/34
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.