Semiconductor pressure sensor
US10317297B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 10, 2015 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Jun 10, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/02
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure sensor for measuring an external pressure exerted on the sensor, including: a membrane; a first resistor connected between a first bias node and a first output node; a second resistor connected between the first bias node and a second output node; a first and second current source connected to the first resp. second output node for generating a differential voltage signal indicative of the external pressure to be measured. The resistors including piezo-resistive strips arranged in particular crystallographic directions. The circuit may have a third and four resistor pair for compensating package stress. The Piezo-resistive strips may be formed as p-doped regions within an n-well, the biasing node being electrically connected to the n-well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.