Patent · US Active

Patterned multi-beam nanoshift lithography for on-the-fly, high throughput production of customizable shape-designed microparticles, nanoparticles, and continuous films

US10317799B2 · kind B2 · utility

0Cited by
6References
22Claims
0Family size

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Key dates

Filing dateMay 1, 2017
Grant dateJun 11, 2019
Priority date
Expiry dateMay 1, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/201
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A system and a method of producing sub-millimeter scale particles are provided herein. The method includes providing a substrate that has a layer of photosensitive material thereon; exposing a portion of the layer to a structured beam of light that has a cross-sectional shape, and a cross-sectional size. The cross-sectional size of the structured beam of light at the layer of photosensitive material is smaller than a sub-millimeter scale particle. The method also includes moving the substrate or the beam of light relative to each other to follow a path for making additional exposures or continuous exposure to result in a discrete exposed pattern in the layer that corresponds to the particle being produced, and exposing the layer to the light; and processing the layer to remove unexposed material around the discrete exposed pattern and to separate the discrete exposed pattern from the layer to provide the sub-millimeter scale particle.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.