Patterned multi-beam nanoshift lithography for on-the-fly, high throughput production of customizable shape-designed microparticles, nanoparticles, and continuous films
US10317799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and a method of producing sub-millimeter scale particles are provided herein. The method includes providing a substrate that has a layer of photosensitive material thereon; exposing a portion of the layer to a structured beam of light that has a cross-sectional shape, and a cross-sectional size. The cross-sectional size of the structured beam of light at the layer of photosensitive material is smaller than a sub-millimeter scale particle. The method also includes moving the substrate or the beam of light relative to each other to follow a path for making additional exposures or continuous exposure to result in a discrete exposed pattern in the layer that corresponds to the particle being produced, and exposing the layer to the light; and processing the layer to remove unexposed material around the discrete exposed pattern and to separate the discrete exposed pattern from the layer to provide the sub-millimeter scale particle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.