Method for forming photolithographic pattern
US10317801B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2016 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Jun 30, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In accordance with some embodiments of the disclosed subject matter, a method for forming a photolithographic pattern is provided. The method comprises: providing a substrate with a negative photoresist layer formed on the substrate; performing an exposure process on a portion of the negative photoresist layer to form an exposed region, wherein a remaining portion of the negative photoresist layer is an unexposed region; performing a first developing process using a water-based developing solution to remove an upper portion of the exposed region, and to reveal a top surface and a side wall of the unexposed region; and performing a second developing process using an organic developing solution after the first developing process to remove the unexposed region and form the photolithographic pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.