Methods of fabricating a semiconductor device
US10319592B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2018 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Apr 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a semiconductor device are provided. The methods may include forming a hard mask film on a lower film and forming first spacers on the hard mask film. The first spacers may define an exposure region of the hard mask film, and the exposure region may include a patterning portion and a non-patterning portion. The methods may also include forming a mold film on the first spacers and forming a blocking pattern in the mold film. The blocking pattern may vertically overlap the non-patterning portion. The methods may further include exposing the first spacers by removing the mold film after forming the blocking pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.