Drain-extended metal-oxide-semiconductor bipolar switch for electrical overstress protection
US10319714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Jan 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
High voltage drain-extended metal-oxide-semiconductor (DEMOS) bipolar switches for electrical overstress protection are provided. In certain configurations herein, an electrical overstress switch embodiment for providing electrical overstress protection, such as electrostatic discharge/electrical overstress (ESD/EOS) protection includes both a DEMOS device and an embedded bipolar device. The switch is implemented to achieve the advantages provided by the combined conduction of DEMOS and bipolar devices. For example, the DEMOS device provides surface conduction at the gate region for relatively fast switch device turn on and low voltage overshoot, while the bipolar device provides high current conduction during stress condition and a high holding voltage characteristics to prevent latch-up in mission critical integrated circuit applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.