Semiconductor device
US10319726B2 · kind B2 · utility
5Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Jul 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.