Method for manufacturing semiconductor device
US10319735B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Mar 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.