Laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers
US10319815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2014 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | May 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
Abstract
Embodiments of laterally diffused metal oxide semiconductor (LDMOS) transistors are provided. An LDMOS transistor includes a substrate having a source region, channel region, and a drain region. A first implant is formed to a first depth in the substrate. A gate electrode is formed over the channel region in the substrate between the source region and the drain region. A second implant is formed in the source region of the substrate; the second implant is laterally diffused under the gate electrode a predetermined distance. A third implant is formed to a second depth in the drain region of the substrate; the second depth is less than the first depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.