Semiconductor device and manufacturing method of semiconductor device
US10319850B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Mar 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
According to one embodiment, a semiconductor device comprising a drain layer, a base region, a source region, a field plate electrode, and a gate region. The drift layer is formed on the drain layer. The base region is formed on the drift layer. The source region is formed on the base region. The field plate electrode is formed inside a trench reaching the drift layer through the base region from the source region. The gate region is formed inside the trench, wherein the gate region has a U-shape including a recess on the gate region in a direction along the trench and is formed such that, on upper surfaces of respective both ends of the U-shape, a position of an inner end on a side of the recess is higher than a position of an outer end on a side of the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.