Semiconductor device and manufacturing method thereof
US10319857B2 · kind B2 · utility
1Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Oct 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.