Semiconductor device having a varying thickness nanowire channel and method for fabricating the same
US10319863B2 · kind B2 · utility
6Cited by
21References
17Claims
0Family size
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Key dates
| Filing date | Dec 8, 2016 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Dec 8, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.