Stratified quantum dot phosphor structure
US10319878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Dec 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is presented for fabricating a light emitting diode (LED) device with a stratified quantum dot (QD) structure. The method provides an LED and a stratified QD structure is formed as follows. A first liquid precursor is deposited overlying the LED emission surface to form a transparent first barrier layer. A second liquid precursor is deposited overlying the first barrier layer to form a first layer of discrete QDs. A third liquid precursor is deposited overlying the first layer of QDs to form a transparent second barrier layer. Subsequent to each barrier layer liquid precursor deposition, an annealing is performed to cure the deposited precursor. The first and second barrier layers act to encapsulate the first layer of QDs. The LED emits a first wavelength of light, and the first layer of QDs converts the first wavelength of light to a first color of light in the visible spectrum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.