Light emitting diode
US10319884B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2016 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Aug 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
A light emitting diode includes a first conductive type semiconductor layer and a mesa disposed on the first conductive type semiconductor layer. The mesa includes an active layer and a second conductive type semiconductor layer. A reflective electrode is disposed on the mesa to be in ohmic-contact with the second conductive type semiconductor layer. A current spreading layer is disposed on the mesa and the reflective electrode. A first portion of the current spreading layer is in ohmic-contact with an upper surface of an end portion of the first conductive type semiconductor layer. A lower insulating layer is disposed between the mesa and the current spreading layer, and the reflective electrode and the current spreading layer. An upper insulating layer covers the current spreading layer and includes a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.