Method and system for determining current-voltage characteristics of a photovoltaic installation
US10320329B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2016 |
| Grant date | Jun 11, 2019 |
| Priority date | — |
| Expiry date | Nov 16, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The method includes connecting a MOSFET-type transistor to the photovoltaic installation; applying, to the transistor, a signal of a control voltage (Vgs) that crosses a linear regime range (φlin) of the transistor, between two critical voltages including a saturation voltage (Vgs(sat)) and a threshold voltage (Vgs(th)), and measuring the current and the voltage of the photovoltaic installation while the linear regime range of the transistor is being crossed. The control voltage signal (Vgs) of the transistor is generated from a digital control signal. The transistor initially being in short-circuit (φcc) or open-circuit (φco) regime, a command is issued for a first, rapid variation (BT1) in the control voltage (Vgs) in the direction of the linear regime range of the transistor, then a second, slow variation (BT2) in the control voltage (Vgs) crossing the linear regime range of the transistor, the transition between the first and the second variation being discontinuous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.