Backside drill embedded die substrate

US10325855B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Daeik Daniel Kim · San Diego, US
• Jie Fu · Beijing, CN
• Changhan Hobie Yun · San Diego, US
• Chin-Kwan Kim · San Diego, US
• Manuel Aldrete · Encinitas, US
• Chengjie Zuo · Santee, US
• Mario Francisco Velez · San Diego, US
• Jonghae Kim · San Diego, US

Key dates

• Filing date: Mar 18, 2016
• Grant date: Jun 18, 2019
• Expiry date: Mar 18, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/15153
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A device and method of fabricating are provided. The device includes a substrate having a first side and an opposite second side, a cavity defined within the substrate from the first side, a die coupled to a floor of the cavity and having a conductive pad on a side of the die distal to the floor of the cavity. A laminate layer coupled to the second side of the substrate may be included. A hole may be drilled, at one time, through layers of the device, through the die, and through the conductive pad. The hole extends through and is defined within the laminate layer (if present), the second side of the substrate, the die, and the conductive pad. A conductive material is provided within the hole and extends between and through the laminate layer (if provided), the second side of the substrate, the die, and the conductive pad.