Thin film transistor, display substrate and display panel having the same, and fabricating method thereof
US10325943B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 12, 2016 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Dec 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application discloses a method of fabricating a thin film transistor, including forming a semiconductor layer having a pattern corresponding to that of the active layer on a base substrate; forming a first photoresist layer on a side of the semiconductor layer distal to the base substrate; the first photoresist layer being in an area corresponding to the channel region, the second doped region, and the fourth doped region; doping a region of the semiconductor layer corresponding to the first doped region and the third doped region using the first photoresist layer as a mask plate; forming a second photoresist layer by removing a portion of the first photoresist layer to expose an initial portion of the semiconductor layer corresponding to at least a portion of the second doped region and at least a portion of the fourth doped region; and doping the initial portion of the semiconductor layer using the second photoresist layer as a mask plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.