Patent · US Active

Image Sensor Device

US10325949B2 · kind B2 · utility

1Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 6, 2018
Grant dateJun 18, 2019
Priority date
Expiry dateAug 6, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/8067
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An image sensor device is provided. The image sensor device includes a substrate having a first surface, a second surface, and a light-sensing region. The image sensor device includes a first isolation structure in the substrate and adjacent to the first surface. The first isolation structure surrounds the light-sensing region. The image sensor device includes a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure. The second isolation structure surrounds the light-sensing region and a portion of the first isolation structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.