Semiconductor device and method of manufacturing the same
US10325992B2 · kind B2 · utility
3Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Sep 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.