Light emitting diode and manufacture method thereof

US10326047B2 · kind B2 · utility

Assignee

• Genesis Photonics Inc. · TW

Inventors

• Tsung-Syun Huang · Tainan, TW
• Jing-En Huang · Tainan, TW
• Yu-Chen Kuo · Tainan, TW
• Yan-Ting Lan · Tainan, TW
• Kai-Shun Kang · Tainan, TW
• Fei-Lung Lu · Tainan, TW
• Teng-Hsien Lai · Tainan, TW
• Yi-Ru Huang · Tainan, TW

Key dates

• Filing date: Sep 2, 2016
• Grant date: Jun 18, 2019
• Expiry date: Sep 2, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.