Semiconductor device having an internal-field-guarded active region

US10326048B2 · kind B2 · utility

Assignee

• TECHNISCHE UNIVERSITÄT BERLIN · DE

Inventors

• Gerald Pahn · Berlin, DE
• Gordon Callsen · Berlin, DE
• Steffen Westerkamp · Berlin, DE

Key dates

• Filing date: Mar 2, 2018
• Grant date: Jun 18, 2019
• Expiry date: Mar 2, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/872

Abstract

A semiconductor device comprises a layer sequence formed by a plurality of polar single crystalline semiconductor material layers that each has a crystal axis pointing in a direction of crystalline polarity and a stacking direction of the layer sequence. A core layer sequence is formed by an active region made of an active layer stack or a plurality of repetitions of the active layer stack. The active layer stack has an active layer having a first material composition associated with a first band gap energy, and carrier-confinement layers embedding the active layer on at least two opposite sides thereof, having a second material composition associated with a second band gap energy larger than the first band gap energy. A pair of polarization guard layers is arranged adjacent to the active region and embedding the active region on opposite sides thereof.