Light emitting diode with field enhanced contact
US10326052B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 12, 2018 |
| Grant date | Jun 18, 2019 |
| Priority date | — |
| Expiry date | Feb 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments relate to a light emitting structure including a light emitting diode, a first contact, and a second contact. The light emitting diode includes a body of transparent semiconductor material with a top surface and a light emitting region below the top surface. The light emitting region emits light in response to current passing through the light emitting region; the emitted light passes through the body of the light emitting diode. The first contact is connected to the top surface of the body and has a spiral shape to induce an electromagnetic field. The electromagnetic field shapes the light emitted from the light emitting region and passes through the body of the light emitting diode. The second contact is connected to a surface of the light emitting structure. A voltage difference can be applied across the first contact and second contact to generate the current through the light emitting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.