Chemical mechanical planarization slurry and method for forming same
US10329455B2 · kind B2 · utility
1Cited by
16References
19Claims
0Family size
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Key dates
| Filing date | Sep 21, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Sep 21, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1436
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A CMP slurry including a carrier, a particulate material within the carrier including an oxide, carbide, nitride, boride, diamond or any combination thereof, an oxidizer including at least one material selected from the group of peroxides, persulfates, permanganates, periodates, perchlorates, hypocholorites, iodates, peroxymonosulfates, cerric ammonium nitrate, periodic acid, ferricyanides, or any combination thereof, and a material removal rate index (MRR) of at least 500 nm/hr and an average roughness index (Ra) of not greater than 5 Angstroms according to the Standardized Polishing test.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.