Cu—Ga—In—Na target

US10329661B2 · kind B2 · utility

Assignee

• Plansee SE · AT

Inventors

• Christian Linke · Celle, DE
• Jiehua Li · Leoben, AT
• Peter Schumacher · Leoben, AT
• Wolfram Knabl · Reutte, AT
• Gerhard Leichtfried · Reutte, AT

Key dates

• Filing date: Jan 29, 2014
• Grant date: Jun 25, 2019
• Expiry date: Sep 25, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/541
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A sputtering target is composed of an alloy consisting of 5 to 70 at % of at least one element from the group of (Ga, In) and 0.1 to 15 at % of Na, the remainder being Cu and typical impurities. The sputtering target includes at least one intermetallic Na-containing phase.