Patent · US Active

Active matrix substrate, liquid crystal panel, and method for manufacturing active matrix substrate

US10330994B2 · kind B2 · utility

0Cited by
0References
16Claims
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Assignee

Inventors

Key dates

Filing dateMay 27, 2016
Grant dateJun 25, 2019
Priority date
Expiry dateMay 27, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02F2201/123
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A drain electrode 25 of a TFT 21 overlaps with a gate electrode formed integrally with a gate line 23. A pixel electrode 22 has a main body part formed on a first side of the gate line 23, and an extension part extending in an extending direction of a data line 24 and covering an overlapping portion of the gate electrode and the drain electrode 25. The drain electrode 25 is not formed on a second side of the gate line 23, whereas the extension part of the pixel electrode 22 is formed also on the second side of the gate line 23. Even when a position of the pixel electrode 22 is shifted in the extending direction of the data line 24, a parasitic capacitance between a drain and a source of the TFT 21 is kept constant, because an area of a portion where the extension part of the pixel electrode 22 overlaps with the gate line 23 does not change. With this, degradation of display quality due to a variation in the parasitic capacitance between the gate and drain of the TFT 21 can be prevented.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.