Methods of operating a nonvolatile memory device and the nonvolatile memory device thereof
US10332607B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Dec 4, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a method of operating a nonvolatile memory device including a memory cell array, where the memory cell array includes a plurality of pages, and each of the plurality of pages includes a plurality of nonvolatile memory cells, a first sampling read operation is performed to count a first number of memory cells in a first region of a first page selected from the plurality of pages, using a first default read voltage and a first offset read voltage, and a second sampling read operation is selectively performed to count a second number of memory cells in a second region of the first page, using the first default read voltage and a second offset read voltage, based on a comparison result of the first number and a first reference value. The second offset read voltage is different from the first offset read voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.