Method for manufacturing HEMT/HHMT device based on CH3NH3PbI3 material
US10332691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Sep 1, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a HEMT/HHMT device based on CH3NH3PbI3 material are provided. The method includes: selecting an Al2O3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al2O3 substrate not covered by the source electrode and the drain electrode; manufacturing CH3NH3PbI3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.