Method of fabricating a semiconductor device
US10332779B2 · kind B2 · utility
0Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2016 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Nov 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device may include forming trenches in a substrate to define a fin structure extending in a direction, forming a device isolation layer to fill the trenches, and removing an upper portion of the device isolation layer to expose an upper side surface of the fin structure. The exposing of the upper side surface of the fin structure may include repeatedly performing an etching cycle including a first step and a second step, and an etching rate of the device isolation layer to the fin structure may be higher in the second step than in the first step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.