Patent · US Active

Array substrate and manufacturing method thereof

US10332807B2 · kind B2 · utility

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6References
17Claims
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Key dates

Filing dateMar 3, 2017
Grant dateJun 25, 2019
Priority date
Expiry dateMar 3, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/60
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An array substrate and a manufacturing method thereof are provided. The method for manufacturing the array substrate includes: forming a passivation layer on a base substrate; forming photoresist on the passivation layer, and forming a first photoresist pattern including a photoresist-completely-retained region, a photoresist-partially-retained region and a photoresist-completely-removed region, by exposure and development processes; forming a first through hole in the passivation layer by etching the passivation layer with the first photoresist pattern as a mask; forming a second photoresist pattern by performing ashing on the first photoresist pattern to remove the photoresist in the photoresist-partially-retained region and reduce a thickness of the photoresist in the photoresist-completely-retained region; and etching the passivation layer with the second photoresist pattern as a mask, so as to reduce a thickness of the passivation layer in the photoresist-partially-retained region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.