Metal line and thin film transistor
US10332916B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Jun 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/421
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiNx), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.