Nitride semiconductor device
US10332976B2 · kind B2 · utility
1Cited by
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14Claims
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Assignee
Inventors
Key dates
| Filing date | Mar 30, 2016 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor device includes a second insulating film (22) covering at least a drain electrode (19) and a thermal stress reducer that reduces thermal stress in a place where thermal stress that is generated between the drain electrode (19) and the second insulating film (22) reaches its maximum at the time of a load short. The thermal stress reducer (19bf) is a drain field plate portion (19bf) formed by an extension of an upper part of the drain electrode (19) toward a source electrode (18).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.