Vertical quantum transistor
US10332982B2 · kind B2 · utility
0Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2017 |
| Grant date | Jun 25, 2019 |
| Priority date | — |
| Expiry date | Sep 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/308
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.