Light-emitting diode chips with enhanced brightness

US10333028B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Liang Chen · Bellevue, US
• Junxian Li · Zhejiang, CN
• Qimeng Lv · Xiamen, CN
• Zhendong Wei · Xiamen, CN
• Yingce LIU · Xiamen, CN
• Xiaoping Li · Lo Wu, CN
• Xinmao Huang · Fujian, CN
• Kaixuan Chen · Xiamen, CN
• Yong Zhang · Nanhu, CN
• Zhiwei Lin · Xiamen, CN
• Wei Jiang · Xiamen, CN
• Xiangjing Zhuo · Xiamen, CN
• Tianzu Fang · Xiamen, CN

Key dates

• Filing date: Apr 7, 2017
• Grant date: Jun 25, 2019
• Expiry date: Apr 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0364

Abstract

According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.